@article {18006,
	title = {Electron beam and optical proximity effect reduction for nanolithography: New results},
	journal = {Journal of Vacuum Science \& Technology B},
	volume = {25},
	year = {2007},
	month = {2007///},
	pages = {2288 - 2294},
	abstract = {Proximity effect correction by dose modulation is widely practiced in electron-beam lithography. Optical proximity control is also possible using a combination of shape adjustment and phase control. Assigning {\textquotedblleft}the right{\textquotedblright} dose (or fill factor and phase for optics) is a well known mathematical inverse problem. Linear programming, by definition, is the appropriate method for determining dose. In the past, the technique was too slow for full-scale implementation in mask making. Here, the authors discuss how recent developments in computer speed and architecture have improved the prospects for full-scale implementation. In addition, the authors discuss some numerical techniques, analogous to gridding and relaxation, that make linear programming more attractive in mask making.},
	keywords = {electron beam lithography, Linear programming, masks, nanolithography, proximity effect (lithography)},
	doi = {10.1116/1.2806967},
	url = {http://link.aip.org/link/?JVB/25/2288/1},
	author = {Peckerar,Martin and Sander,David and Srivastava,Ankur and Foli,Adakou and Vishkin, Uzi}
}
